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Grating properties of level population in resonant atomic Rb ((lambda) equals 7800 angstroms) and Cs ((lambda) equals 8521 angstroms) vapor both in thick vapor cell and near the dielectric- vapor boundary are investigated in reference to the problem of the creation of spectral- selective elements for semiconductor lasers with external cavities.
Andrew E. Korolev andVladimir N. Nazarov
"Spectral properties of the resonant dynamic gratings, produced by radiation of semiconductor lasers in metallic vapor", Proc. SPIE 1724, Tunable Diode Laser Applications, (1 April 1992); https://doi.org/10.1117/12.58681
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Andrew E. Korolev, Vladimir N. Nazarov, "Spectral properties of the resonant dynamic gratings, produced by radiation of semiconductor lasers in metallic vapor," Proc. SPIE 1724, Tunable Diode Laser Applications, (1 April 1992); https://doi.org/10.1117/12.58681