Electromigration and current-carrying implications for aluminum-based metallurgy with tungsten stud via interconnections

Hazara Singit Rathore; R. G. Filippi; R. A. Wachnik; Jose J. Estabil; Thomas Kwok

doi:10.1117/12.145481

21 May 1993 Electromigration and current-carrying implications for aluminum-based metallurgy with tungsten stud via interconnections

Hazara Singit Rathore, R. G. Filippi, R. A. Wachnik, Jose J. Estabil, Thomas Kwok

Author Affiliations +

Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993) https://doi.org/10.1117/12.145481
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

The electromigration behavior of Ti-AlCu-Ti metallurgy is presented in this work. For single- level structures in the absence of tungsten (W) stud interconnections, a greater-than-100X lifetime improvement over AlCu is measured. The metal linewidth strongly affects the median time to failure, T₅₀, and standard deviation, sigma ((sigma) ), of the lognormal distribution. For two-level W stud chains, a 50X degradation in lifetime as compared to single-level structures is measured. The lifetime of these W stud chains depends on the Ti- AlCu-Ti current density rather than the stud current density. The 'reservoir effect', in which the electromigration lifetime of Ti-AlCu-Ti stripes depends strongly on W studs near the electron source end of the stripes, is a direct result of W acting as a diffusion barrier. The lifetime of W stud chains with Ti-AlCu-Ti metallurgy is longer for 2.0% copper than for 0.5% copper.

Citation Download Citation

Hazara Singit Rathore, R. G. Filippi, R. A. Wachnik, Jose J. Estabil, and Thomas Kwok "Electromigration and current-carrying implications for aluminum-based metallurgy with tungsten stud via interconnections", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145481

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