1.3-um InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents

Ching Long Jiang; Robert J. Miller; Mark Soler; Maria D. Ferreira; Keith Wilder; Eugene A. Imhoff; John D. Kulick; Randy Wilson

doi:10.1117/12.147598

24 June 1993 1.3-μm InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents

Ching Long Jiang, Robert J. Miller, Mark Soler, Maria D. Ferreira, Keith Wilder, Eugene A. Imhoff, John D. Kulick, Randy Wilson

Author Affiliations +

Proceedings Volume 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices; (1993) https://doi.org/10.1117/12.147598
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

A narrow spread of threshold currents from 10.8 to 12.8 mA across a wafer has been demonstrated. To the best of our knowledge, this is the narrowest spread of threshold currents that has ever been reported for non-broad-area semiconductor lasers. From experimental results, it seems that the active width is probably the most important parameter in controlling the spread of threshold currents.

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Ching Long Jiang, Robert J. Miller, Mark Soler, Maria D. Ferreira, Keith Wilder, Eugene A. Imhoff, John D. Kulick, and Randy Wilson "1.3-μm InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents", Proc. SPIE 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices, (24 June 1993); https://doi.org/10.1117/12.147598

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