Paper
13 August 1993 Photoresists based on chalcogenide glasses for submicron lithography
Illana Bar, Matvei Klebanov, Victor Lyubin, Salman Rosenwaks, S. Shtutina, V. Volterra
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Abstract
It is shown that the photosensitivity of photoresists based on chalcogenide glasses can be increased drastically (1000 times and more) using excitation by pulsed radiation of excimer laser. A model is developed that explains the increase in sensitivity. The main advantages of chalcogenide photoresists are discussed and conclusions are drawn on the prospects of these resists for submicron photolithography.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Illana Bar, Matvei Klebanov, Victor Lyubin, Salman Rosenwaks, S. Shtutina, and V. Volterra "Photoresists based on chalcogenide glasses for submicron lithography", Proc. SPIE 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine, (13 August 1993); https://doi.org/10.1117/12.151100
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photoresist materials

Excimer lasers

Helium neon lasers

Chalcogenide glass

Transparency

Optical engineering

Plasmas

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