Paper
7 June 1996 Fast and accurate optical proximity correction based on aerial image simulation
Tetsuro Hanawa, Kazuya Kamon, Akihiro Nakae, Shuji Nakao, Koichi Moriizumi
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Abstract
Because optical lithography requires precise CD control, we developed a fast, accurate proximity correction method based on aerial image simulation. Simple formulas using a linear combination of simulated aerial image intensities both at and around mask edge were found effective for fast, precise CD prediction. Using the developed CD prediction and the fine biasing correction methods, we verified that various two-dimensional patterns printed by an i- line stepper using modified illumination and binary intensity mask are satisfactorily corrected; i.e., CD deviations from designed values, line shortening and feature deformations are effectively reduced.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetsuro Hanawa, Kazuya Kamon, Akihiro Nakae, Shuji Nakao, and Koichi Moriizumi "Fast and accurate optical proximity correction based on aerial image simulation", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240929
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Cited by 2 scholarly publications.
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KEYWORDS
Optical proximity correction

Photomasks

Critical dimension metrology

Semiconducting wafers

Binary data

Diffraction

Optical lithography

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