Progress in GaAs JFETs for 4-kelvin IR readout applications

Thomas J. Cunningham

doi:10.1117/12.243531

26 June 1996 Progress in GaAs JFETs for 4-kelvin IR readout applications

Thomas J. Cunningham

Proceedings Volume 2745, Infrared Readout Electronics III; (1996) https://doi.org/10.1117/12.243531
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

Gallium arsenide junction field-effect transistors (GaAs JFETs) can be made immune to carrier freeze-out, allowing them to operate normally from room temperature down to 4 K. This makes GaAs JFETs attractive for the readout of detector arrays that operate at deep cryogenic temperatures (< 10 K). Typical IR readout applications, however, require transistors with very low noise and extremely low input leakage current, and until recently the leakage current of cryogenic GaAs devices was too high for many IR readout applications. By using a recently developed HF-based etchant for GaAs that is highly isotropic, etched GaAs JFETs have been fabricated that have a gently tapered edge. This reduces edge fields, which consequently reduces the edge tunneling current, the dominant source of leakage current at 4 K. JFETs with gate leakage currents below 10^-15 amps at 4 K have been fabricated. The fabrication technique, including the isotropic etchant, is discussed. The leakage current and noise of these JFETs are presented and compared with previous devices using a conventional etch.

Citation Download Citation

Thomas J. Cunningham "Progress in GaAs JFETs for 4-kelvin IR readout applications", Proc. SPIE 2745, Infrared Readout Electronics III, (26 June 1996); https://doi.org/10.1117/12.243531

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