Effect of electric arc plasma jet treatment on porous silicon properties

V. I. Beclemishev; V. M. Maslovsky; Alexander I. Belogorokhov; G. Y. Pavlov; V. A. Karavanskii; Nikolay N. Melnik; T. N. Zavaritskaja

doi:10.1117/12.232224

11 March 1996 Effect of electric arc plasma jet treatment on porous silicon properties

V. I. Beclemishev, V. M. Maslovsky, Alexander I. Belogorokhov, G. Y. Pavlov, V. A. Karavanskii, Nikolay N. Melnik, T. N. Zavaritskaja

Author Affiliations +

Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232224
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic

Abstract

The effect of arc plasma jet treatment (APJT) on the porous silicon (PS) structure, surface, and photoluminescence (PL) has been studied. The investigation of PS FTIR absorption spectra indicate that the Ar/air APJT induces the decreasing of the concentration of Si-H_n, C-H_n, (n equals 1, 2, 3) bonds and corresponding increasing of Si-O_x bonds more than an order of magnitude. This transformation of surface conditions resulted in not enough large decreasing (about 2 - 3 times maximum) of the PL intensity with red shifting of the peak from 665 nm to 700 nm. These results suggest that the change of PL occurs as a result of APJT induced replacement of the Si-H_n bonds with Si-O_x bonds. We have analyzed the effect of plasma conditions on the PL characteristics. The luminescence mechanism is also discussed.

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V. I. Beclemishev, V. M. Maslovsky, Alexander I. Belogorokhov, G. Y. Pavlov, V. A. Karavanskii, Nikolay N. Melnik, and T. N. Zavaritskaja "Effect of electric arc plasma jet treatment on porous silicon properties", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); https://doi.org/10.1117/12.232224

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