Preparation and photoluminescence of nc-Si/SiO2 MQW

Buwen Cheng; Jinzhong Yu; Zhuo Yu; Zhenlin Lei; Daizong Li; Qiming Wang

doi:10.1117/12.317995

12 August 1998 Preparation and photoluminescence of nc-Si/SiO₂ MQW

Buwen Cheng, Jinzhong Yu, Zhuo Yu, Zhenlin Lei, Daizong Li, Qiming Wang

Proceedings Volume 3551, Integrated Optoelectronics II; (1998) https://doi.org/10.1117/12.317995
Event: Photonics China '98, 1998, Beijing, China

Abstract

The deposition rate and refractive index for a-Si(amorphous silicon) and SiO₂ grown by PECVD were studied under different pressure, power and proportion of reactant source gases. a-Si/SiO₂ MQW(multi-quantum well) with high quality was deposited under suitable conditions, in which the thickness of the a-Si layers is several nanometers. The sample of a-Si/SiO₂ MQW was crystallized by laser annealing. Because of the confinement of the SiO₂ layers, crystalline grains were formed during the a-Si layers were being crystallized. The size of the crystalline grains were not more than the thickness of the a-Si layers. The a-Si layers were crystallized to be nanometer crystalline silicon (nc-Si), therefore, nc-Si/SiO₂ MQW was formed. For the a-Si/SiO₂ MQW with 4.0 nm a-Si wells separated by 5 nm SiO₂ barriers, most of the a-Si were crystallized to silicon grains after laser annealing, and the size of the grains is 3.8 nm. Strong photoluminescence with three peaks from the nc-Si/SiO₂ MQW was detected at 10 K. The wavelength of the peaks were 810 nm, 825 nm and 845 nm, respectively.

Citation Download Citation

Buwen Cheng, Jinzhong Yu, Zhuo Yu, Zhenlin Lei, Daizong Li, and Qiming Wang "Preparation and photoluminescence of nc-Si/SiO₂ MQW", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317995

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