Strong violet light emission from Ge+-implanted SiO2 layers

Lars Rebohle; Ida E. Tyschenko; J. von Borany; Wolfgang Skorupa; H. Froeb

doi:10.1117/12.342785

19 March 1999 Strong violet light emission from Ge⁺-implanted SiO₂ layers

Lars Rebohle, Ida E. Tyschenko, J. von Borany, Wolfgang Skorupa, H. Froeb

Proceedings Volume 3630, Silicon-based Optoelectronics; (1999) https://doi.org/10.1117/12.342785
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

It was shown that Ge⁺-implanted SiO₂ thermally grown on crystalline Si is one of the most promising materials for Si-based light emission. This material exhibits strong violet photo-(PL) and electroluminescence (EL) at room temperature, which is well visible by the naked eye at ambient light. In detail, the PL spectra of Ge-rich layers peaking around 400 nm reach a maximum after annealing at 500 degrees Celsius to 800 degrees Celsius for Ge concentrations in the range of 0.3 to 2 at%. Based on PL excitation (PLE) spectra we tentatively interpret the violet PL as due to the neutral oxygen vacancy typical for Si-rich SiO₂ and similar Ge- related defects in Ge⁺-implanted silicon dioxide. EL and electrical measurements were carried out at MOS capacitors using a transparent ITO and a thick Al front contact, respectively. The I-V-dependence exhibiting the typical behavior of Fowler-Nordheim tunneling shows an increase of the breakdown voltage and the tunneling current for Ge-rich oxide in comparison to the unimplanted material. The EL spectrum of the Ge-implanted oxide correlates very well with the PL one. The EL intensity shows a linear dependence on the injected current over three orders of magnitude. EL efficiencies up to 5 X 10^-4 for Ge⁺-implanted silicon dioxide were found.

Citation Download Citation

Lars Rebohle, Ida E. Tyschenko, J. von Borany, Wolfgang Skorupa, and H. Froeb "Strong violet light emission from Ge⁺-implanted SiO₂ layers", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342785

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