CVD Si1-xGex epitaxial growth and its applications to MOS devices

Junichi Murota; Masao Sakuraba; Takashi Matsuura

doi:10.1117/12.360548

1 September 1999 CVD Si_1-xGe_x epitaxial growth and its applications to MOS devices

Junichi Murota, Masao Sakuraba, Takashi Matsuura

Proceedings Volume 3881, Microelectronic Device Technology III; (1999) https://doi.org/10.1117/12.360548
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

By ultraclean low-pressure CVD using SiH₄ and GeH₄ gases, high quality Si_1-xGe_x epitaxial growth on Si(100) is achieved. In order to prevent island growth and generation of misfit dislocations in the heterostructure, relatively low deposition temperatures and optimization of the layer thickness are inevitable for the high Ge fractions. Atomically flat surfaces and interfaces for the Si/Si_1-xGe_x/Si heterostructures containing Si_0.8Ge_0.2, Si_0.5Ge_0.5 and Si_0.3Ge_0.7 layers are obtained by deposition at 550, 500 and 450 degrees C, respectively. It is also found that the Si_0.5Ge_0.5-channel pMOSFET has the highest peak field- effect mobility. The deposition rate, the Ge fraction and the in-situ doping characteristics with the B₂H₆ and PH₃ addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si_1-xGe_x on the source/drain regions.

Citation Download Citation

Junichi Murota, Masao Sakuraba, and Takashi Matsuura "CVD Si_1-xGe_x epitaxial growth and its applications to MOS devices", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360548

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