pH sensitivity and hysteresis of A-WO3 gate ISFET compared with different membranes

Jung Lung Chiang; Jung Chuan Chou; Ying-Chung Chen

doi:10.1117/12.369359

11 November 1999 pH sensitivity and hysteresis of A-WO₃ gate ISFET compared with different membranes

Jung Lung Chiang, Jung Chuan Chou, Ying-Chung Chen

Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369359
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Because of the pH sensitivity is one of the important characteristic parameters of ISFET devices. The response of ISFET is mainly determined with the type of the sensing membrane, therefore the sensing material plays a significant role. In addition, the hysteresis is the non-ideal and unstable factor of ISFET devices for measuring. Hence, in this study, the pH sensitivity and hysteresis of a-WO₃ gate ISFET are investigated, and compare with different sensing membranes.

Citation Download Citation

Jung Lung Chiang, Jung Chuan Chou, and Ying-Chung Chen "pH sensitivity and hysteresis of A-WO₃ gate ISFET compared with different membranes", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); https://doi.org/10.1117/12.369359

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