Trench formation in <110> silicon for millimeter-wave switching device

P. Datta; Praveen Kumar; Manoj Nag; D. K. Bhattacharya; Y. P. Khosla; K. K. Dahiya; D. V. Singh; R. Venkateswaran; Devender Kumar; R. Kesavan

doi:10.1117/12.369461

9 November 1999 Trench formation in <110> silicon for millimeter-wave switching device

P. Datta, Praveen Kumar, Manoj Nag, D. K. Bhattacharya, Y. P. Khosla, K. K. Dahiya, D. V. Singh, R. Venkateswaran, Devender Kumar, R. Kesavan

Author Affiliations +

Proceedings Volume 3903, Indo-Russian Workshop on Micromechanical Systems; (1999) https://doi.org/10.1117/12.369461
Event: Indo-Russian Workshop on Micromechanical Systems, 1999, New Delhi, India

Abstract

Anisotropic etching using alkaline solution has been adopted to form trenches in silicon while fabricating surface oriented bulk window SPST switches. An array pattern has been etched on silicon with good control on depth of trenches. KOH-water solution is seen to yield a poor surface finish. Use of too much of additive like isopropyl alcohol improves the surface condition but distorts the array pattern due to loss of anisotropy. However, controlled use of this additive during the last phase of trench etching is found to produce trenched arrays with desired depth, improved surface finish and minimum distortion of lateral dimensions.

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P. Datta, Praveen Kumar, Manoj Nag, D. K. Bhattacharya, Y. P. Khosla, K. K. Dahiya, D. V. Singh, R. Venkateswaran, Devender Kumar, and R. Kesavan "Trench formation in <110> silicon for millimeter-wave switching device", Proc. SPIE 3903, Indo-Russian Workshop on Micromechanical Systems, (9 November 1999); https://doi.org/10.1117/12.369461

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