Experimental one- and two-dimensional mechanical stress characterization of silicon microsystems using micro-Raman spectroscopy

W. Merlijn van Spengen; Ingrid De Wolf; Roy Knechtel

doi:10.1117/12.395600

11 August 2000 Experimental one- and two-dimensional mechanical stress characterization of silicon microsystems using micro-Raman spectroscopy

W. Merlijn van Spengen, Ingrid De Wolf, Roy Knechtel

Author Affiliations +

Proceedings Volume 4175, Materials and Device Characterization in Micromachining III; (2000) https://doi.org/10.1117/12.395600
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States

Abstract

In this paper, the capabilities and problems if micro-Raman spectroscopy are discussed for measuring local mechanical stress, both in mono- crystalline and poly-crystalline silicon microstructures. The possibilities of this technique are demonstrated for two different MEMS: the crystalline Si membrane of a pressure sensor and a poly-crystalline Si beam. For both MEMS, an auto-focus Raman system was used. The stress in the membrane of the pressure sensor was investigated before and after bonding of the Si wafer containing the sensors to a glass substrate. This bonding resulted in an under-pressure in the sensor, deflecting the membrane inwardly. Raman spectra were measured from the top surface and the bottom surface of the membrane. This resulted in a map of the stress distribution. It indicates, for the top surface, tensile stress near the edges, compressive stress in the center, and hardly any stress at the corners. The stress in the poly-crystalline Si beam was measured using two different wavelengths of the laser beam. The results show a local tensile stress distribution along the length of the beam.

Citation Download Citation

W. Merlijn van Spengen, Ingrid De Wolf, and Roy Knechtel "Experimental one- and two-dimensional mechanical stress characterization of silicon microsystems using micro-Raman spectroscopy", Proc. SPIE 4175, Materials and Device Characterization in Micromachining III, (11 August 2000); https://doi.org/10.1117/12.395600

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available