Characteristics of laser diodes influenced by electron-dominant nonuniform carrier distribution

Bing-Ruey Wu; Ching-Fuh Lin; Lih-Wen Laih; Tien-Tsorng Shih

doi:10.1117/12.432620

9 July 2001 Characteristics of laser diodes influenced by electron-dominant nonuniform carrier distribution

Bing-Ruey Wu, Ching-Fuh Lin, Lih-Wen Laih, Tien-Tsorng Shih

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432620
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Electron-determined nonuniform carrier distribution inside multiple quantum wells (MQW) is experimentally discovered. Two groups of mirror-imaged nonidentical quantum well InGaAsP/InP lasers diodes are designed, fabricated, and measured. Measured characteristics of both groups show that electron, instead of hole, is the dominant carrier affecting carrier distribution. Carrier transport effects including carrier diffusion/drift and capture/emission processes inside MQW are described to explain the nonuniform carrier distribution. The reason for the electron dominated carrier distribution is because electron takes less time to be capture into QW 2D states than hole does. The sequence of the nonidentical QWS is also shown to have significant influence on device characteristics.

Citation Download Citation

Bing-Ruey Wu, Ching-Fuh Lin, Lih-Wen Laih, and Tien-Tsorng Shih "Characteristics of laser diodes influenced by electron-dominant nonuniform carrier distribution", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432620

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