Paper
21 December 2001 Ultrathin organic films for field effect transistors
Henrik G. O. Sandberg, Oliver Henze, Henning Sirringhaus, Andreas Kilbinger, W. James Feast, Richard H. Friend
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Abstract
Organic field effect transistors FET have been fabricated with active semiconducting organic thin films that are only a few monolayers thick. The motivation of this study has been to establish a direct correlation between transistor performance and the polymer microstructure in the ultrathin accumulation layer of the transistor. Monolayer thick films of a block copolymer and several model oligomers consisting of a rigid conjugated sexithiophene (6T) block and a flexible polyethyleneoxide (PEO) block have been deposited onto the surface of e.g. SiO2 gate dielectrics functionalized with a self-assembled monolayer. Block copolymer phase behavior and surface morphology has been studied as a function of chain length, solvent and film thickness. Operational transistors have been demonstrated with film thicknesses of only one or two monolayers. Typical device characteristics show a carrier mobility on the order of 10-2 - 10-3 cm2/Vs and ON-OFF current ratio of 103 - 105. Film microstructure, orientation of micro-crystallites and film thickness have been studied by atomic force microscopy (AFM), UV-Vis absorption spectroscopy and X-ray diffraction.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henrik G. O. Sandberg, Oliver Henze, Henning Sirringhaus, Andreas Kilbinger, W. James Feast, and Richard H. Friend "Ultrathin organic films for field effect transistors", Proc. SPIE 4466, Organic Field Effect Transistors, (21 December 2001); https://doi.org/10.1117/12.451476
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Cited by 7 scholarly publications.
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KEYWORDS
Molecules

Field effect transistors

Absorption

Thin films

Atomic force microscopy

Polymers

Transistors

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