Spectroscopic Techniques For Characterization Of Gas Phase Species In Plasma Etching And Vapor Deposition Processes

Joda Wormhoudt; Alan C. Stanton; Joel A. Silver

doi:10.1117/12.939293

10 May 1984 Spectroscopic Techniques For Characterization Of Gas Phase Species In Plasma Etching And Vapor Deposition Processes

Joda Wormhoudt, Alan C. Stanton, Joel A. Silver

Author Affiliations +

Proceedings Volume 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I; (1984) https://doi.org/10.1117/12.939293
Event: 1983 Cambridge Symposium, 1983, Cambridge, United States

Abstract

This paper presents a review of techniques for spectroscopic characterization of mile gas pnase species involved in vapor depositon and plasma etching, two processes of great importance in the semiconductor industry. Descriptions of the apparatus requirements and capabilities of diode laser absorption and dye laser resonance fluorescence detection techniques are given. In addition, band strength and other spectroscopic data for selected molecules are used to give estimates of the detection sensitivity for various species.

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Joda Wormhoudt, Alan C. Stanton, and Joel A. Silver "Spectroscopic Techniques For Characterization Of Gas Phase Species In Plasma Etching And Vapor Deposition Processes", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939293

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