High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm

Marc T. Kelemen; Franz Rinner; Joseph Rogg; Nicolas Wiedmann; Rudolf Kiefer; Martin Walther; Michael Mikulla; Guenter Weimann

doi:10.1117/12.462644

16 April 2002 High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm

Marc T. Kelemen, Franz Rinner, Joseph Rogg, Nicolas Wiedmann, Rudolf Kiefer, Martin Walther, Michael Mikulla, Guenter Weimann

Author Affiliations +

Proceedings Volume 4648, Test and Measurement Applications of Optoelectronic Devices; (2002) https://doi.org/10.1117/12.462644
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Semiconductor lasers with high beam quality and high optical output power are very attractive for a variety of applications such as optical pumping of solid-state lasers, fiber amplifiers and medical treatment. When easy and low- cost fabrication is a further requirement, devices based on tapered gain sections are the most promising candidates. Low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 940 nm were grown by molecular beam epitaxy. The lateral design consists of a tapered gain guided and a ridge-waveguide section having an overall length between 2 mm and 3 mm. Whereas the length of the tapered structure determines the high output power, the high brightness requires a ridge-waveguide structure with sufficient length. Here the length of the ridge section has been chosen to 500 micrometers . We achieved an optical output power of up to 5.3 W at room temperature in continuous wave mode. The threshold current density depends on the tapered length with values between 200 A/cm² and 650 A/cm². The slope efficiency is around 0.9 W/A for all devices. The wall plug efficiency reaches 44% at a current of 3 A. The beam quality factor remains nearly constant up to about 2.2 W having an M²-value of 1.3. At higher optical powers M² increases fast. The lifetime of such devices has been extrapolated to more than 7500 h at room temperature.

Citation Download Citation

Marc T. Kelemen, Franz Rinner, Joseph Rogg, Nicolas Wiedmann, Rudolf Kiefer, Martin Walther, Michael Mikulla, and Guenter Weimann "High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm", Proc. SPIE 4648, Test and Measurement Applications of Optoelectronic Devices, (16 April 2002); https://doi.org/10.1117/12.462644

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