High-power UV laser machining of silicon wafers

Tom M. Corboline; Edward C. Rea Jr.; Corey M. Dunsky

doi:10.1117/12.540931

18 November 2003 High-power UV laser machining of silicon wafers

Tom M. Corboline, Edward C. Rea Jr., Corey M. Dunsky

Proceedings Volume 5063, Fourth International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.540931
Event: Fourth International Symposium on Laser Precision Microfabrication, 2003, Munich, Germany

Abstract

As the demand for semiconductor devices based upon ever-thinner silicon substrates continues to increase, mechanical techniques suitable for dicing wafers appear to be approaching their practical limits. Recent advances in power scaling have now enabled reliable ultraviolet-wavelength lasers to be considered to offer a flexible solution to this dilemma. This paper presents new data on the machining of thin silicon wavers using a high average power 355-nm wavelength pulsed laser. In particular, the concept of pulse repetition-rate scaling of the effective cutting speeds was investigated to determine the preferred direction for further laser development efforts.

Citation Download Citation

Tom M. Corboline, Edward C. Rea Jr., and Corey M. Dunsky "High-power UV laser machining of silicon wafers", Proc. SPIE 5063, Fourth International Symposium on Laser Precision Microfabrication, (18 November 2003); https://doi.org/10.1117/12.540931

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