New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching

R. Haidar; Philippe Kupecek; Emmanuel Rosencher; Robert Triboulet; Ph. Lemasson

doi:10.1117/12.519751

22 October 2003 New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching

R. Haidar, Philippe Kupecek, Emmanuel Rosencher, Robert Triboulet, Ph. Lemasson

Author Affiliations +

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519751
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The French aerospace agency is involved in the realization of compact solid-state coherent sources, such as optical parametric oscillators (OPO), using new materials, such as highly non-linearly efficient semiconductors (ZnSe, GaAs or InP). However, since these materials are optically isotropic, they require new phase-matching techniques. We report the quasi-phase matched difference frequency generation in isotropic semiconductors using total internal reflection. We made use of large Fresnel birefringence at reflection between the signal and idler wave outputs of an OPO. Large tunability (between 8 and 13 μm) is demonstrated. Agreement between theoretical expectation and experimental results is excellent.

Citation Download Citation

R. Haidar, Philippe Kupecek, Emmanuel Rosencher, Robert Triboulet, and Ph. Lemasson "New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519751

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