Analysis and simulation of noise in correlated double sampling imager circuits

Leonard Forbes; Harish Gopalakrishnan; Weetit Wanalertlak

doi:10.1117/12.608761

23 May 2005 Analysis and simulation of noise in correlated double sampling imager circuits

Leonard Forbes, Harish Gopalakrishnan, Weetit Wanalertlak

Proceedings Volume 5844, Noise in Devices and Circuits III; (2005) https://doi.org/10.1117/12.608761
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States

Abstract

Noise is an important factor in determining the sensitivity of CMOS imagers at low light levels. Both device or transistor thermal noise and l/f noise are contributing factors, correlated double sampling reduces the effect of both thermal noise and l/f noise but is less effective in reducing l/f noise as sampling time increases. Techniques to simulate noise in sampling circuits have only recently become available and are compared here to the older analytical techniques.

Citation Download Citation

Leonard Forbes, Harish Gopalakrishnan, and Weetit Wanalertlak "Analysis and simulation of noise in correlated double sampling imager circuits", Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); https://doi.org/10.1117/12.608761

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