Electronic transport through silicon nanocrystals embedded in SiO<sub>2</sub> matrix

M. D. Efremov; S. A. Arzhannikova; G. N. Kamaev; G. A. Kachurin; A. V. Kretinin; V. V. Malutina-Bronskaya; D. V. Marin; V. A. Volodin; S. G. Cherkova

doi:10.1117/12.677164

10 June 2006 Electronic transport through silicon nanocrystals embedded in SiO₂ matrix

M. D. Efremov, S. A. Arzhannikova, G. N. Kamaev, G. A. Kachurin, A. V. Kretinin, V. V. Malutina-Bronskaya, D. V. Marin, V. A. Volodin, S. G. Cherkova

Author Affiliations +

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600L (2006) https://doi.org/10.1117/12.677164
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

The presented work is devoted to investigation of electrical properties of metal-oxide-semiconductor structures containing nanocrystals in silicon dioxide. Nanocrystals were fabricated in the middle of SiO₂ layer with use of ion implantation and following thermal treatments at a temperature of ~1000°C. Capacity-voltage (C-V) and current-voltage (I-V) characteristics were measured at room and nitrogen temperatures at various frequencies from 1kHz up to 145kHz. I-V characteristics of MOS-structures with 75nm thick SiO₂ layer demonstrated repeatable steps. Position of steps qualitatively corresponds to theoretical one, which were calculated using electron state energies for nanocrystals with size 5 nm. Steps due to Coulomb blockade effect on spin degenerated levels in nanocrystals are resolved in experiment. CV- characteristics displayed sharp frequency dependent peak possibly corresponded to approximately mono-energetic states, which provides transport of electrons through SiO_x.

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M. D. Efremov, S. A. Arzhannikova, G. N. Kamaev, G. A. Kachurin, A. V. Kretinin, V. V. Malutina-Bronskaya, D. V. Marin, V. A. Volodin, and S. G. Cherkova "Electronic transport through silicon nanocrystals embedded in SiO₂ matrix", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600L (10 June 2006); https://doi.org/10.1117/12.677164

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