Paper
20 October 2006 Rapid temperature processing (RTP) system for selenization of photovoltaic materials
Michał Warzecha, Henryk Jankowski, Lidia Maksymowicz, Tadeusz Pisarkiewicz, Cezary Worek
Author Affiliations +
Proceedings Volume 6348, Optoelectronic and Electronic Sensors VI; 634808 (2006) https://doi.org/10.1117/12.721040
Event: Optoelectronic and Electronic Sensors VI, 2006, Zakopane, Poland
Abstract
Rapid Temperature Processing (RTP) methodology is widely applied in thin-film photovoltaic materials technology due to high quality of fabricated cells and also perspectives for their mass manufacturing. This paper describes a RTP device structure which contains the graphite reactor for selenization of Cu/In or Cu/In/Se precursors. Strong nonlinearity of radiative energy transfer makes RTP controlling difficult so it still needs to be improved. Using mathematical model of the device, we are proposing the method of process controlling. Experimentally obtained temperature profiles of Rapid Temperature Processes are presented and compared with temperature profile of typical CIS selenization graphite reactor. Presented steering procedure, based on our model, gives improves by decreasing time needed for selenization and simultaneously reducing costs of the process.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michał Warzecha, Henryk Jankowski, Lidia Maksymowicz, Tadeusz Pisarkiewicz, and Cezary Worek "Rapid temperature processing (RTP) system for selenization of photovoltaic materials", Proc. SPIE 6348, Optoelectronic and Electronic Sensors VI, 634808 (20 October 2006); https://doi.org/10.1117/12.721040
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KEYWORDS
Quartz

Mathematical modeling

Copper indium disulfide

Process control

Photovoltaic materials

Temperature metrology

Selenium

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