Near-field spectroscopic analysis of the mode structure in high-power diode lasers based on a double barrier separate confinement heterostructure

Anna Kozlowska; Andrzej Maląg; Robert Pomraenke; Julien Renard; Christoph Lienau

doi:10.1117/12.685124

19 October 2006 Near-field spectroscopic analysis of the mode structure in high-power diode lasers based on a double barrier separate confinement heterostructure

Anna Kozlowska, Andrzej Maląg, Robert Pomraenke, Julien Renard, Christoph Lienau

Author Affiliations +

Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 63680X (2006) https://doi.org/10.1117/12.685124
Event: Optics East 2006, 2006, Boston, Massachusetts, United States

Abstract

An analysis of the mode structure of high-power double-barrier separate confinement DB SCH diode lasers is presented. The devices are characterized by very low vertical beam divergence (13 - 22°, depending on the design version). Modelling of the fundamental mode distribution for three different design versions of DB SCH diode lasers is discussed and the results are compared to a macroscopic characterization of the devices (far-field directional characteristics and photocurrent spectra). Microscopic measurements of the near field distribution of these diode lasers with subwavelength spatial resolution are performed by employing a Near-field Photocurrent (NPC) technique. The mode structure of diode lasers is directly visualized giving indications about the interplay between the heterostructure design and the emission characteristics.

Citation Download Citation

Anna Kozlowska, Andrzej Maląg, Robert Pomraenke, Julien Renard, and Christoph Lienau "Near-field spectroscopic analysis of the mode structure in high-power diode lasers based on a double barrier separate confinement heterostructure", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 63680X (19 October 2006); https://doi.org/10.1117/12.685124

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