Paper
19 October 2006 Nonlithographic nanostructure devices and circuits
B. Das, A. Banerjee
Author Affiliations +
Abstract
We have developed an ultra-high vacuum technique for the fabrication of complex nanosystems incorporating nonlithographic nanoparticles, ohmic contact metals and isolation dielectrics. It is believed that such a multi-component structure is a necessary prerequisite for the realization of practical photonic and electronic devices based on nanoparticles. The technique is compatible with silicon integrated circuit technology, thus making it suitable for volume manufacturing. The technique is also versatile, and allows the deposition of nanoparticles of any metal, semiconductor or insulator with diameters as small as 2 nm with less than 5% size variation. In addition, the technique allows the creation of multi-layered structures of nanoparticles of different dimensions separated by metal or dielectric layers. The technique also has the potential for creating patterned layers of nanopartciles. We have demonstrated the versatility of the equipment by depositing Si-nanoparticles with pre-selected narrow size-distributions as well as multi-layered structures of such nanoparticles.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Das and A. Banerjee "Nonlithographic nanostructure devices and circuits", Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 637016 (19 October 2006); https://doi.org/10.1117/12.692997
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KEYWORDS
Nanoparticles

Silicon

Nanostructures

Particles

Metals

Semiconductors

Nanolithography

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