Experimental Evidence And Characterization Of Resonant Impurity Levels By Magneto-Transport Experiments Under Hydrostatic Pressure In HgCdTe.

J L Robert; A Raymond; C Bousquet; L Ghenim

doi:10.1117/12.938541

22 November 1986 Experimental Evidence And Characterization Of Resonant Impurity Levels By Magneto-Transport Experiments Under Hydrostatic Pressure In HgCdTe.

J L Robert, A Raymond, C Bousquet, L Ghenim

Author Affiliations +

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938541
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

The aim of this paper is to demonstrate that transport experiments under high magnetic fields and under hydrostatic pressure are a very convenient tool to characterize impurity levels in II-VI compounds. The method has been used in the cases of bulk . semiconductors and of implanted thin films. The existence of resonant impurity states has been clearly pointed out. In the particular case of boron implanted thin films the experiments demonstrate clearly the existence of a resonant level induced by implantation and located approximately at 150 meV above the conduction band minimum.

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J L Robert, A Raymond, C Bousquet, and L Ghenim "Experimental Evidence And Characterization Of Resonant Impurity Levels By Magneto-Transport Experiments Under Hydrostatic Pressure In HgCdTe.", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938541

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