Photocurrent enhancement in In0.53Ga0.47As solar cells grown on InP/SiO2/Si transferred epitaxial templates

James M. Zahler; Katsuaki Tanabe; Corinne Ladous; Tom Pinnington; Frederick D. Newman; Harry A. Atwater

doi:10.1117/12.734801

11 September 2007 Photocurrent enhancement in In_0.53Ga_0.47As solar cells grown on InP/SiO₂/Si transferred epitaxial templates

James M. Zahler, Katsuaki Tanabe, Corinne Ladous, Tom Pinnington, Frederick D. Newman, Harry A. Atwater

Author Affiliations +

Proceedings Volume 6649, High and Low Concentration for Solar Electric Applications II; 664909 (2007) https://doi.org/10.1117/12.734801
Event: Solar Energy + Applications, 2007, San Diego, California, United States

Abstract

InP/Si engineered substrates formed by wafer bonding and layer transfer have the potential to significantly reduce the cost and weight of III-V compound semiconductor solar cells. InP/Si substrates were prepared by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. Following thinning of the transferred InP film to remove surface damage caused by the implantation and exfoliation process, InGaAs solar cells lattice-matched to bulk InP were grown on these substrates using metal-organic chemical vapor deposition. The photovoltaic current-voltage characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, and had a ~20% higher short-circuit current which we attribute to the high reflectivity of the InP/SiO₂/Si bonding interface. This work provides an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications.

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James M. Zahler, Katsuaki Tanabe, Corinne Ladous, Tom Pinnington, Frederick D. Newman, and Harry A. Atwater "Photocurrent enhancement in In_0.53Ga_0.47As solar cells grown on InP/SiO₂/Si transferred epitaxial templates", Proc. SPIE 6649, High and Low Concentration for Solar Electric Applications II, 664909 (11 September 2007); https://doi.org/10.1117/12.734801

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