Amorphous silicon-based large-format uncooled FPA microbolometer technology

T. Schimert; J. Brady; T. Fagan; M. Taylor; W. McCardel; R. Gooch; S. Ajmera; C. Hanson; A. J. Syllaios

doi:10.1117/12.784661

17 April 2008 Amorphous silicon based large format uncooled FPA microbolometer technology

T. Schimert, J. Brady, T. Fagan, M. Taylor, W. McCardel, R. Gooch, S. Ajmera, C. Hanson, A. J. Syllaios

Proceedings Volume 6940, Infrared Technology and Applications XXXIV; 694023 (2008) https://doi.org/10.1117/12.784661
Event: SPIE Defense and Security Symposium, 2008, Orlando, Florida, United States

Abstract

This paper presents recent developments in next generation microbolometer Focal Plane Array (FPA) technology at L-3 Communications Infrared Products (L-3 CIP). Infrared detector technology at L-3 CIP is based on hydrogenated amorphous silicon (a-Si:H) and amorphous silicon germanium(a-SiGe:H). Large format high performance, fast, and compact IR FPAs are enabled by a low thermal mass pixel design; favorable material properties; an advanced ROIC design; and wafer level packaging. Currently at L-3 CIP, 17 micron pixel FPA array technology including 320x240, 640 x 480 and 1024 x768 arrays is under development. Applications of these FPAs range from low power microsensors to high resolution near-megapixel imager systems.

Citation Download Citation

T. Schimert, J. Brady, T. Fagan, M. Taylor, W. McCardel, R. Gooch, S. Ajmera, C. Hanson, and A. J. Syllaios "Amorphous silicon based large format uncooled FPA microbolometer technology", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694023 (17 April 2008); https://doi.org/10.1117/12.784661

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