Highly nonlinear GaSb-based saturable absorber mirrors

R. Koskinen; S. Suomalainen; J. Paajaste; S. Kivistö; M. Guina; O. Okhotnikov; M. Pessa

doi:10.1117/12.820690

19 May 2009 Highly nonlinear GaSb-based saturable absorber mirrors

R. Koskinen, S. Suomalainen, J. Paajaste, S. Kivistö, M. Guina, O. Okhotnikov, M. Pessa

Proceedings Volume 7354, Nonlinear Optics and Applications III; 73540G (2009) https://doi.org/10.1117/12.820690
Event: SPIE Optics + Optoelectronics, 2009, Prague, Czech Republic

Abstract

We present a gallium antimonide-based semiconductor saturable absorber mirror (SESAM) operating at 2 μm wavelength region. GaSb-based material system is the preferred choice for fabricating surface-normal devices operating beyond 2 μm because it enables the use of highly reflective semiconductor reflectors and quantum wells for wide wavelength range. For the purpose of generating short laser pules, the SESAM was carefully designed to attain a large modulation depth. The device was utilised successfully to passively Q-switch a 2 μm Tm³⁺-/Ho³⁺ -doped fiber laser, demonstrating record-short Q-switch pulses of about 20 ns.

Citation Download Citation

R. Koskinen, S. Suomalainen, J. Paajaste, S. Kivistö, M. Guina, O. Okhotnikov, and M. Pessa "Highly nonlinear GaSb-based saturable absorber mirrors", Proc. SPIE 7354, Nonlinear Optics and Applications III, 73540G (19 May 2009); https://doi.org/10.1117/12.820690

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