Organic light-emitting diodes based on bipolar material FLAMB-1T

Lu Li; Junsheng Yu; Zhu Ma; Yadong Jiang

doi:10.1117/12.865468

22 October 2010 Organic light-emitting diodes based on bipolar material FLAMB-1T

Lu Li, Junsheng Yu, Zhu Ma, Yadong Jiang

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 765851 (2010) https://doi.org/10.1117/12.865468
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

Organic light-emitting diodes (OLEDs) were fabricated with a structure of indium-tin-oxide (ITO)/poly(Nvinylcarbazole) (PVK): 2-{4-[bis(9,9-dimethylfluorenyl)amino]phenyl}-5-(dimesitylboryl)thiophene (FLAMB-1T)/[tris (8-quinolinolato) aluminum (Alq₃) or 2,2',2"(1,3,5-benzenetriyl) tris-(1- phenyl-1Hbenzimidazole) (TPBi)]/Mg : Ag by spin coating method using a bipolar material of FLAMB-1T. Electroluminescent (EL) spectra characteristic was investigated, and the performance differences of the OLEDs were analyzed. Also, the luminance-voltage characteristics of the two devices were compared. The luminances of the devices were 2085 and 4389 cd/m² at 15.5 V. The maximum power efficiencies of the devices were 0.24 and 4.9 lm/W. The EL spectra were located at 520 and 478 nm with the electron transporting layer of Alq₃ and TPBi, respectively. The emitting processes of the device were discussed using energy transfer and direct carrier trapping principle in polymeric material.

Citation Download Citation

Lu Li, Junsheng Yu, Zhu Ma, and Yadong Jiang "Organic light-emitting diodes based on bipolar material FLAMB-1T", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765851 (22 October 2010); https://doi.org/10.1117/12.865468

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