Low-temperature electroluminescent behaviors of InGaN/GaN-based nanorod light emitting diode arrays

Liang-Yi Chen; Chun-Hsiang Chang; Ying-Yuan Huang; JianJang Huang

doi:10.1117/12.893534

23 September 2011 Low-temperature electroluminescent behaviors of InGaN/GaN-based nanorod light emitting diode arrays

Liang-Yi Chen, Chun-Hsiang Chang, Ying-Yuan Huang, JianJang Huang

Proceedings Volume 8123, Eleventh International Conference on Solid State Lighting; 81230T (2011) https://doi.org/10.1117/12.893534
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

For InGaN/GaN based nanorod devices using top-down etching process, the optical output power is affected by non-radiative recombination due to sidewall defects (which decrease light output efficiency) and mitigated quantum confined Stark effect (QCSE) due to strain relaxation (which increases internal quantum efficiency). Therefore, the exploration of low-temperature optical behaviors of nanorod light emitting diodes (LEDs) will help identify the correlation between those two factors. In this work, low-temperature EL spectra of InGaN/GaN nanorod arrays was explored and compared with those of planar LEDs. The nanorod LED exhibits a much higher optical output percentage increase when the temperature decreases. The increase is mainly attributed to the increased carriers and a better spatial overlap of electrons and holes in the quantum wells for radiative recombination. Next, while the nanorod array shows nearly constant peak energy with increasing injection currents at the temperature of 300K, the blue shift has been observed at 190K. The results suggest that with more carriers in the quantum wells, carrier screening and band filling still prevail in the partially strain relaxed nanorods. Moreover, when the temperature drops to 77K, the blue shift of both nanorod and planar devices disappears and the optical output power decreases since there are few carriers in the quantum wells for radiative recombination.

Citation Download Citation

Liang-Yi Chen, Chun-Hsiang Chang, Ying-Yuan Huang, and JianJang Huang "Low-temperature electroluminescent behaviors of InGaN/GaN-based nanorod light emitting diode arrays", Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81230T (23 September 2011); https://doi.org/10.1117/12.893534

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