Paper
27 September 2012 Fabrication and ab initio study of downscaled graphene nanoelectronic devices
Hiroshi Mizuta, Zakaria Moktadir, Stuart A. Boden, Nima Kalhor, Shuojin Hang, Marek E. Schmidt, Nguyen Tien Cuong, Dam Hieu Chi, Nobuo Otsuka, Manoharan Muruganathan, Yoshishige Tsuchiya, Harold Chong, Harvey N. Rutt, Darren M. Bagnall
Author Affiliations +
Abstract
In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Mizuta, Zakaria Moktadir, Stuart A. Boden, Nima Kalhor, Shuojin Hang, Marek E. Schmidt, Nguyen Tien Cuong, Dam Hieu Chi, Nobuo Otsuka, Manoharan Muruganathan, Yoshishige Tsuchiya, Harold Chong, Harvey N. Rutt, and Darren M. Bagnall "Fabrication and ab initio study of downscaled graphene nanoelectronic devices", Proc. SPIE 8462, Carbon Nanotubes, Graphene, and Associated Devices V, 846206 (27 September 2012); https://doi.org/10.1117/12.956439
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Cited by 1 scholarly publication.
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KEYWORDS
Graphene

Ions

Helium

Scattering

Lithography

Ion beams

Raman scattering

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