Influence of low energy H- ion implantation on the electrical and material properties of quaternary alloy (In0.21Al0.21Ga0.58As) capped InAs/GaAs n-i-n QDIPs

A. Mandal; H. Ghadi; K. L. Mathur; A. Basu; N. B. V. Subrahmanyam; P. Singh; S. Chakrabarti

doi:10.1117/12.2001805

29 March 2013 Influence of low energy H^- ion implantation on the electrical and material properties of quaternary alloy (In_0.21Al_0.21Ga_0.58As) capped InAs/GaAs n-i-n QDIPs

A. Mandal, H. Ghadi, K. L. Mathur, A. Basu, N. B. V. Subrahmanyam, P. Singh, S. Chakrabarti

Author Affiliations +

Proceedings Volume 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X; 86340A (2013) https://doi.org/10.1117/12.2001805
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

The effect of low energy H^– ions implantation on the InAs/GaAs quantum dot infrared photodetectors had been studied. Light ion implantation was found to be an effective post growth technique which helped dark current density suppression by four orders in the implanted devices. In this study we had mainly concentrated on determining how the defect-related material and structural changes had an impact on dark current density reduction for InAs/GaAs quantum dot infrared photodetectors.

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A. Mandal, H. Ghadi, K. L. Mathur, A. Basu, N. B. V. Subrahmanyam, P. Singh, and S. Chakrabarti "Influence of low energy H^- ion implantation on the electrical and material properties of quaternary alloy (In_0.21Al_0.21Ga_0.58As) capped InAs/GaAs n-i-n QDIPs", Proc. SPIE 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X, 86340A (29 March 2013); https://doi.org/10.1117/12.2001805

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