(Hgzn)Te Infrared Detectors Performances

J Ameurlaine; A Rousseau; T Nguyen-Duy; R Triboulet

doi:10.1117/12.943541

3 May 1988 (Hgzn)Te Infrared Detectors Performances

J Ameurlaine, A Rousseau, T Nguyen-Duy, R Triboulet

Proceedings Volume 0865, Focal Plane Arrays: Technology and Applications; (1988) https://doi.org/10.1117/12.943541
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

The new (HgZn)Te alloys were found to present numerous advantages over (HgCd)Te, such as increased stability of the crystal lattice and reduced dislocation density. A suitable growth process is already in place. Adaptation of the classical (HgCd)Te planar process technology (ion implantation instead of meicury diffusion) permits the duplication of the performance characteristics found in (HgCd)Te. A particular attribute of this material is its exceptional performance at very long wavelengths and its stability at elevated temperatures. With growth method and process technology already in existence, series fabrication of these devices can be implemented without major problems. In view of the numerous technical advantages offered by (HgZn)Te over (HgCd)Te detectors, these may be considered to be serious candidates for future infrared systems.

Citation Download Citation

J Ameurlaine, A Rousseau, T Nguyen-Duy, and R Triboulet "(Hgzn)Te Infrared Detectors Performances", Proc. SPIE 0865, Focal Plane Arrays: Technology and Applications, (3 May 1988); https://doi.org/10.1117/12.943541

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