Relaxation of photoconductivity in porous silicon for gas sensing

L. S. Monastyrskii

doi:10.1117/12.2017999

31 May 2013 Relaxation of photoconductivity in porous silicon for gas sensing

L. S. Monastyrskii

Proceedings Volume 8718, Advanced Environmental, Chemical, and Biological Sensing Technologies X; 87180P (2013) https://doi.org/10.1117/12.2017999
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

The model of relaxation of photoconductivity of porous silicon, in which recombination of photocarriers is taken into account on the spherical surface of pores at the shutdown of illumination, is presented and numerically investigated. By the finite element method it is calculated time evolution of the photoconductivity of porous silicon and dependence of the relaxation time of photoconductivity on the surface recombination velocity, which is determined by a concentration and nature of adsorbed gas, as well as on the radius of pores and average distance between them

Citation Download Citation

L. S. Monastyrskii "Relaxation of photoconductivity in porous silicon for gas sensing", Proc. SPIE 8718, Advanced Environmental, Chemical, and Biological Sensing Technologies X, 87180P (31 May 2013); https://doi.org/10.1117/12.2017999

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