A novel single dot test structure for determining specific contact resistivity

Yue Pan; Aaron M. Collins; Anthony S. Holland

doi:10.1117/12.2034077

7 December 2013 A novel single dot test structure for determining specific contact resistivity

Yue Pan, Aaron M. Collins, Anthony S. Holland

Proceedings Volume 8923, Micro/Nano Materials, Devices, and Systems; 89232Q (2013) https://doi.org/10.1117/12.2034077
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2013, Melbourne, Victoria, Australia

Abstract

The specific contact resistivity of a metal-semiconductor ohmic contact can be determined in various ways and several of these use the transmission line model approach. Concentric circular contacts have circular equipotential and using this and the transmission line model equations for such contacts, a new technique for determining specific contact resistivity is presented. An analytical technique is used to determine the error of this structure and the developed analytical equations are presented. Finite-element modeling results for Al-SiC ohmic contacts are presented to validate the analytical equations. The scaling behavior of this structure is also discussed.

Citation Download Citation

Yue Pan, Aaron M. Collins, and Anthony S. Holland "A novel single dot test structure for determining specific contact resistivity", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89232Q (7 December 2013); https://doi.org/10.1117/12.2034077

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