An asymmetric sampled Bragg grating structure for improving semiconductor laser efficiency

Yating Zhou; Gang Wang; Hong Zhu; Jun Lu; Xiangfei Chen

doi:10.1117/12.2073460

3 December 2014 An asymmetric sampled Bragg grating structure for improving semiconductor laser efficiency

Yating Zhou, Gang Wang, Hong Zhu, Jun Lu, Xiangfei Chen

Proceedings Volume 9267, Semiconductor Lasers and Applications VI; 926713 (2014) https://doi.org/10.1117/12.2073460
Event: SPIE/COS Photonics Asia, 2014, Beijing, China

Abstract

An asymmetric sampled Bragg grating (SBG) semiconductor laser, which consists of two sections with same length but different sampling duty cycle, can be introduced an arbitrary equivalent-phase-shift (EPS) into its center. At the same time, to adjust the sampling duty cycles in the two sections as different magnitude, the studied laser can output more lasing power from its one facet than that from the other one. That is to say, this method can be used to design and fabricate the EPS SBG semiconductor laser with higher output efficiency.

Citation Download Citation

Yating Zhou, Gang Wang, Hong Zhu, Jun Lu, and Xiangfei Chen "An asymmetric sampled Bragg grating structure for improving semiconductor laser efficiency", Proc. SPIE 9267, Semiconductor Lasers and Applications VI, 926713 (3 December 2014); https://doi.org/10.1117/12.2073460

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