Paper
8 September 2015 Effect of the Pauli principle on photoelectron spin transport in p+ GaAs
F. Cadiz, D. Paget, A. C. H. Rowe, L. Martinelli, S. Arscott
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Abstract
In p+ GaAs thin films, under excitation by a tightly-focused laser, the spatial profile of the spin polarization is monitored as a function of excitation power. It is found that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle which causes a concentration dependence of the spin stiffness. Thermoelectric currents are also predicted to depend on spin under degeneracy (spin Soret currents), but these currents play a relatively small role in this case. The spin dependence of the mobility is also found weak. Conversely, ambipolar coupling with holes increases the steady-state photo-electron density at the place of excitation and therefore the amplitude of the degeneracy-induced polarization decrease at the place of excitation.
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F. Cadiz, D. Paget, A. C. H. Rowe, L. Martinelli, and S. Arscott "Effect of the Pauli principle on photoelectron spin transport in p+ GaAs", Proc. SPIE 9551, Spintronics VIII, 955125 (8 September 2015); https://doi.org/10.1117/12.2188080
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KEYWORDS
Diffusion

Polarization

Gallium arsenide

Scattering

Spin polarization

Tellurium

Luminescence

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