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7 March 2022 2D g-C3N4/GaN nanorods device for UV photodetector and NO2 gas sensor at room temperature
Na-hyun Bak, Maddaka Reddeppa, Kedhareswara S. Pasupuleti, Dong-Jin Nam, Song-Gang Kim, Moon-Deock Kim
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Proceedings Volume PC11998, Organic Photonic Materials and Devices XXIV; PC1199804 (2022) https://doi.org/10.1117/12.2614521
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
In this work, we improved charge carrier separation efficiency through a g-C3N4/GaN NRs heterostructure device. We characterized the properties of the g-C3N4/GaN NRs device with detecting the UV light and sensing NO2 gas at room temperature. The device showed high responsivity and detectivity under zero bias conditions due to the built-in field at the interface of the heterostructure. The performance of the heterostructure was stimulated under UV light illuminations with 2.3 times higher response compared to the darkness. In addition, the device response to NO2, NH3, H2, H2S and CO ambient gases at RT were measured, the device exhibited high response to NO2 gas. The low activation energy promoted to capture NO2 gas molecules.
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Na-hyun Bak, Maddaka Reddeppa, Kedhareswara S. Pasupuleti, Dong-Jin Nam, Song-Gang Kim, and Moon-Deock Kim "2D g-C3N4/GaN nanorods device for UV photodetector and NO2 gas sensor at room temperature", Proc. SPIE PC11998, Organic Photonic Materials and Devices XXIV, PC1199804 (7 March 2022); https://doi.org/10.1117/12.2614521
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KEYWORDS
Gas sensors
Nanorods
Nitrogen dioxide
Photodetectors
Ultraviolet radiation
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