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21 March 2023 Time-dependent characterization of spectral-lateral dynamics in InGaN laser diodes with various ridge width
Lukas Uhlig, Anna Kafar, Szymon Grzanka, Piotr Perlin, Ulrich T. Schwarz
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648877
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Broad area InGaN laser diodes have gained importance as versatile high-power sources in the blue spectral range. Lateral multi-mode operation naturally occurs in a ridge waveguide that is more than 3-5 µm broad, while also the formation of longitudinal mode bunches is amplified by a large active region. We investigate a series of broad-ridge InGaN laser diodes with different cavity length and ridge width and characterize their spectral-lateral-temporal behavior. Lateral modes of different order show sequential onset dynamics and can be observed at different wavelengths. We characterize their interplay with longitudinal mode dynamics as well as the emerging lateral-longitudinal mode pattern depending on cavity length and ridge width.
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Lukas Uhlig, Anna Kafar, Szymon Grzanka, Piotr Perlin, and Ulrich T. Schwarz "Time-dependent characterization of spectral-lateral dynamics in InGaN laser diodes with various ridge width", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648877
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KEYWORDS
Semiconductor lasers
Indium gallium nitride
Pulsed laser operation
Metals
Modes of laser operation
Modulation
Monochromators
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