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9 March 2024 Growth of high indium content quantum wells on micropatterned substrates
Adam Brejnak, Anna Kafar, Conny Becht, Krzysztof Gibasiewicz, Jacek Kacperski, Lucja Marona, Szymon Grzanka, Ulrich T. Schwarz, Piotr Perlin
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288607 (2024) https://doi.org/10.1117/12.3002342
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
The growth of high In content InGaN material is notorious for being challenging because of high mechanical strain and thermodynamic instability of the system. It has been shown that one can improve the growth quality by using variable surface miscut. In this study, we demonstrate the use of micropatterning of bulk GaN substrates in order to improve the quality of high In content layers. During MOVPE growth the quality of the InGaN layers and the In content depends on the local shape of the substrate surface, reaching the highest emission intensity at the top of every pattern. We study patterns with characteristic sizes ranging from 1 to 6 µm created using two methods: binary photolithography combined with a thermal reflow process as well as multilevel photolithography. The latter allows for achieving lower inclination of the sidewall of the pattern which in turn supports a more stable growth process. The properties of the samples are studied using fluorescence microscopy, microphotoluminescence mapping and carrier diffusion measurements.
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Adam Brejnak, Anna Kafar, Conny Becht, Krzysztof Gibasiewicz, Jacek Kacperski, Lucja Marona, Szymon Grzanka, Ulrich T. Schwarz, and Piotr Perlin "Growth of high indium content quantum wells on micropatterned substrates", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288607 (9 March 2024); https://doi.org/10.1117/12.3002342
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KEYWORDS
Indium
Optical lithography
Quantum wells
Gallium nitride
Photoresist materials
Quantum emitters
Quantum processes
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