CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12886 > Article
Presentation
9 March 2024 Exploring carrier diffusion in varying thickness InGaN/GaN quantum wells
Simon Litschgi, Fabian Rol, Amélie Dussaigne, Bruno Gayral, Névine Rochat, Guillaume Veux, Quentin Durlin
Author Affiliations +
Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860C (2024) https://doi.org/10.1117/12.3002269
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Recent carrier diffusion length measurements in InGaN quantum wells (QWs) revealed the potential for carriers to travel tens of micrometers before recombination. These observations are consistent with the efficiency loss in InGaN micro-Light-Emitting-Diodes (µLEDs) with size reduction down to a few microns. From micro-photoluminescence and cathodoluminescence measurements, a QW-width-dependent study on InGaN QWs grown on various substrates show a diffusion length reduction with QW thickness. This is consistent with the fact that carrier lifetime decreases with QW-width in c-plane InGaN QWs, due to a Quantum-Confined-Stark-Effect (QCSE) reduction. Additionally, a study on the effects of carrier density and substrate-type will be presented.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Simon Litschgi, Fabian Rol, Amélie Dussaigne, Bruno Gayral, Névine Rochat, Guillaume Veux, and Quentin Durlin "Exploring carrier diffusion in varying thickness InGaN/GaN quantum wells", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860C (9 March 2024); https://doi.org/10.1117/12.3002269
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Quantum wells
Diffusion
Indium gallium nitride
Gallium nitride
Sapphire
Silicon
Quantum optical communication
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top