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13 March 2024 Silicon-integrated SWIR and MWIR GeSn photoconductive devices
Coralie Bellemare, Mahmoud R. M. Atalla, Patrick Daoust, Sebastian Koelling, Simone Assali, Oussama Moutanabbir
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Proceedings Volume PC12891, Silicon Photonics XIX; PC128910D (2024) https://doi.org/10.1117/12.2691910
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
SWIR and MWIR photodetector technologies are mainly served by III-V and II-VI materials such as InSb, InGaAs, and HgCdTe which are costly, require cooling, and face manufacturing and scalability challenges. GeSn is an attractive group IV material that is Si-compatible with the potential to circumvent these challenges by enabling the fabrication of SWIR and MWIR detectors on a scalable and cost-effective Si platform. In this work, material development and optoelectrical properties of a set of heterostructures made of Si/Ge/GeSn are presented. The material properties and its potential application in photodetectors are discussed. For instance, at a low Sn content (below 5 at.%), we found that GeSn-based photoconductive devices display unexpectedly a low dark current and exhibit a room-temperature cutoff wavelength of 1.75 um and a responsivity of 0.52 A/W at 1.55 um. Results from microscopic and spectroscopic studies are also presented. Finally, capacitance devices are fabricated to extract unintentional doping concentrations from CV measurements.
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Coralie Bellemare, Mahmoud R. M. Atalla, Patrick Daoust, Sebastian Koelling, Simone Assali, and Oussama Moutanabbir "Silicon-integrated SWIR and MWIR GeSn photoconductive devices", Proc. SPIE PC12891, Silicon Photonics XIX, PC128910D (13 March 2024); https://doi.org/10.1117/12.2691910
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KEYWORDS
Mid-IR
Short wave infrared radiation
Silicon
Photodetectors
Dark current
Tin
Fiber optic communications
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