Presentation
9 March 2024 Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells
Author Affiliations +
Abstract
Topological insulators (TI) based on InAs/GaSb quantum wells are appealing due to their rich phase diagram with a topological and normal insulating phase. Due to the spatial separation of electrons and holes in the InAs and GaSb layer, respectively, a switching between both phases can be achieved by external electric fields using a top and back gate. We present another tuning knob using optical excitation. By monitoring the charge carrier densities, we can identify the hybridized band structure and in-plane magnetic field measurements evidence the TI gap. We will discuss how the interplay of negative photoconductivity and persistent charge carrier buildup leads to the tuning of the phase diagram by optical excitation.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sven Höfling "Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells", Proc. SPIE PC12895, Quantum Sensing and Nano Electronics and Photonics XX, PC1289507 (9 March 2024); https://doi.org/10.1117/12.2692316
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KEYWORDS
Dielectrics

Quantum wells

Electric fields

Electrons

Gallium antimonide

Indium arsenide

Magnetism

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