Presentation
9 March 2024 Ferroelectric nitride heterostructures and nanostructures for applications in quantum photonics and electronics
Author Affiliations +
Abstract
The incorporation of group IIIB elements such as scandium (Sc) and yttrium (Y) can transform conventional III-nitride semiconductors to be ferroelectric. In this talk I will present recent advances of ferroelectric nitride semiconductors, including epitaxy, properties, and emerging device applications. Molecular beam epitaxy of a broad range of ferroelectric nitrides, including ScAlN, ScGaN, YAlN, and their heterostructures and nanostructures, together with their unique piezoelectric, dielectric, ferroelectric, and nonlinear optical properties will be discussed. The realization of ultrathin ferroelectric nitride heterostructures and the underlying physics and properties will be presented, together with their applications in quantum photonics and electronics.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zetian Mi "Ferroelectric nitride heterostructures and nanostructures for applications in quantum photonics and electronics", Proc. SPIE PC12895, Quantum Sensing and Nano Electronics and Photonics XX, PC128950U (9 March 2024); https://doi.org/10.1117/12.3001712
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KEYWORDS
Heterojunctions

Photonic nanostructures

Quantum electronics

Quantum photonics

Quantum properties

Scandium

Semiconductors

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