The incorporation of group IIIB elements such as scandium (Sc) and yttrium (Y) can transform conventional III-nitride semiconductors to be ferroelectric. In this talk I will present recent advances of ferroelectric nitride semiconductors, including epitaxy, properties, and emerging device applications. Molecular beam epitaxy of a broad range of ferroelectric nitrides, including ScAlN, ScGaN, YAlN, and their heterostructures and nanostructures, together with their unique piezoelectric, dielectric, ferroelectric, and nonlinear optical properties will be discussed. The realization of ultrathin ferroelectric nitride heterostructures and the underlying physics and properties will be presented, together with their applications in quantum photonics and electronics.
|