Presentation
11 April 2024 Excited-state bandgap dynamics in silica from first principles
Author Affiliations +
Abstract
Wide-bandgap materials such as silicon dioxide (fused silica, α-quartz) can undergo strong excitation when exposed to high-power ultrashort laser pulses. This leads to a high transient electron density in the conduction band, causing distortion in the bands and resulting in a significant bandgap renormalization. Additionally, there is a spatial redistribution of the excited charges, leading to weakening of silica bonds and subsequent reorganization of the crystal structure, further contributing to the change in the bandgap. Through the use of Density Functional Theory, Time-Dependent Density Functional Theory, and GW approximation, the evolution of the bandgap is studied at different levels of excitation, revealing changes of up to several electronvolts on ultrashort timescales.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elena Kachan, Arshak Tsaturyan, Razvan Stoian, and Jean-Philippe Colombier "Excited-state bandgap dynamics in silica from first principles", Proc. SPIE PC12939, High-Power Laser Ablation VIII, PC129391B (11 April 2024); https://doi.org/10.1117/12.3012458
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KEYWORDS
Silica

Conduction bands

Crystals

Distortion

High power lasers

Laser bonding

Ultrafast phenomena

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