Wide-bandgap materials such as silicon dioxide (fused silica, α-quartz) can undergo strong excitation when exposed to high-power ultrashort laser pulses. This leads to a high transient electron density in the conduction band, causing distortion in the bands and resulting in a significant bandgap renormalization. Additionally, there is a spatial redistribution of the excited charges, leading to weakening of silica bonds and subsequent reorganization of the crystal structure, further contributing to the change in the bandgap. Through the use of Density Functional Theory, Time-Dependent Density Functional Theory, and GW approximation, the evolution of the bandgap is studied at different levels of excitation, revealing changes of up to several electronvolts on ultrashort timescales.
|