Temperature dependence of wafer-bonded III-V on silicon multijunction solar cells with luminescent coupling effect

Bernice Mae F. Yu Jeco; Elias Veinberg-Vidal; Laura Vauche; Nazmul Ahsan; Yoshitaka Okada

doi:10.1117/1.JPE.9.015503

21 March 2019 Temperature dependence of wafer-bonded III-V on silicon multijunction solar cells with luminescent coupling effect

Bernice Mae F. Yu Jeco, Elias Veinberg-Vidal, Laura Vauche, Nazmul Ahsan, Yoshitaka Okada

Author Affiliations +

Journal of Photonics for Energy, Vol. 9, Issue 1, 015503 (March 2019). https://doi.org/10.1117/1.JPE.9.015503

Abstract

Strong luminescent coupling (LC) effect in a multijunction solar cell (MJSC) allows better current balance among its subcells. The temperature dependence of wafer-bonded III-V on silicon (Si) MJSCs with LC effect was investigated. Experimentally, this was explored through light current density–voltage (J – V) characteristic measurements, external quantum efficiency measurements, and laser beam-induced current mapping of InGaP/AlGaAs//Si triple junction solar cells at different cell temperatures. Measurement results were analyzed using a quasi-two-dimensional electro-optical prediction model for LC current production and bandgap temperature dependence models of various semiconductors. It was revealed that at lower temperatures, LC current production in the limiting Si bottom cell resulted in a larger absolute LC quantum efficiency difference. At 15°C, the absolute LC quantum efficiency difference calculated was 0.17%, which indicates potential current production improvement if vertical LC current is made uniform.

Citation Download Citation

Bernice Mae F. Yu Jeco, Elias Veinberg-Vidal, Laura Vauche, Nazmul Ahsan, and Yoshitaka Okada "Temperature dependence of wafer-bonded III-V on silicon multijunction solar cells with luminescent coupling effect," Journal of Photonics for Energy 9(1), 015503 (21 March 2019). https://doi.org/10.1117/1.JPE.9.015503

Received: 1 October 2018; Accepted: 2 March 2019; Published: 21 March 2019

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