Open Access
9 February 2024 Detection of structural asymmetries in Forksheet FET arrays using Mueller matrix ellipsometry: a theoretical study
Boglárka Dikó, Roberta Zsófia Kiss, Dávid Egri, Emeric Balogh
Author Affiliations +
Abstract

Background

With the appearance of ever-smaller transistors and new structures, new metrological challenges also arise, including the detection of different structural defects. Mueller matrix (MM) measurement can provide an opportunity to investigate them.

Aim

Defects can cause a deterioration in device performance; therefore, their characterization is particularly important. Our goal is to investigate the possibility of detecting asymmetry defects using MM measurement and to study the distinguishability of these structural imperfections in the case of forksheet field-effect transistor (FET).

Approach

Simulation of MM measurements with different degrees and directions of forksheet FET’s profile asymmetries. To quantify the distinguishability of the optical responses caused by the defects, the correlation between the asymmetry parameters was calculated. Since the precise alignment of a sample is a key factor in the detection of asymmetries, the effect of the alignment uncertainty and a method for filtering it out were also investigated.

Results and Conclusions

MM measurement is sensitive to both the magnitude and direction of the profile bending and the shift of the dielectric wall. The correlation coefficients show that the optical responses of the asymmetry defects and the alignment error can be distinguished. The latter can even be eliminated with a method presented in this article.

CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 International License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Boglárka Dikó, Roberta Zsófia Kiss, Dávid Egri, and Emeric Balogh "Detection of structural asymmetries in Forksheet FET arrays using Mueller matrix ellipsometry: a theoretical study," Journal of Micro/Nanopatterning, Materials, and Metrology 23(1), 014001 (9 February 2024). https://doi.org/10.1117/1.JMM.23.1.014001
Received: 12 October 2023; Accepted: 16 January 2024; Published: 9 February 2024
Advertisement
Advertisement
KEYWORDS
Picosecond phenomena

Field effect transistors

Matrices

Critical dimension metrology

Mueller matrices

Reflection

Correlation coefficients

Back to Top