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3 February 2017 Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer
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Abstract
A two-dimensional finite-element model was developed to simulate the optoelectronic performance of a Schottky-barrier solar cell. The heart of this solar cell is a junction between a metal and a layer of n -doped indium gallium nitride ( In ξ Ga 1 ξ N ) alloy sandwiched between a reflection-reducing front window and a periodically corrugated metallic back reflector. The bandgap of the In ξ Ga 1 ξ N layer was varied periodically in the thickness direction by varying the parameter ξ ( 0,1 ) . First, the frequency-domain Maxwell postulates were solved to determine the spatial profile of photon absorption and, thus, the generation of electron–hole pairs. The AM1.5G solar spectrum was taken to represent the incident solar flux. Next, the drift-diffusion equations were solved for the steady-state electron and hole densities. Numerical results indicate that a corrugated back reflector of a period of 600 nm is optimal for photon absorption when the In ξ Ga 1 ξ N layer is homogeneous. The efficiency of a solar cell with a periodically nonhomogeneous In ξ Ga 1 ξ N
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Tom H. Anderson, Tom G. Mackay, and Akhlesh Lakhtakia "Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer," Journal of Photonics for Energy 7(1), 014502 (3 February 2017). https://doi.org/10.1117/1.JPE.7.014502
Received: 8 December 2016; Accepted: 18 January 2017; Published: 3 February 2017
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CITATIONS
Cited by 17 scholarly publications.
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KEYWORDS
Gallium

Solar cells

Reflectors

Gallium nitride

Doping

Indium nitride

Energy efficiency


CHORUS Article. This article was made freely available starting 03 February 2018

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