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27 November 2013 Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations
Taiichi Otsuji, Takayuki Watanabe, Stephane Albon Boubanga Tombet, Akira Satou, Victor Ryzhii, Vyacheslav V. Popov, Wojciech Knap
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Optical Engineering, Vol. 53, Issue 3, 031206 (November 2013). https://doi.org/10.1117/1.OE.53.3.031206
Abstract
The recent advances in emission and detection of terahertz radiation using two-dimensional (2-D) plasmons in semiconductor nanoheterostructures for nondestructive evaluations are reviewed. The 2-D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron-mobility transistor and incorporates the authors’ original asymmetrically interdigitated dual-grating gates. Excellent THz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on THz imaging are also presented.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Taiichi Otsuji, Takayuki Watanabe, Stephane Albon Boubanga Tombet, Akira Satou, Victor Ryzhii, Vyacheslav V. Popov, and Wojciech Knap "Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations," Optical Engineering 53(3), 031206 (27 November 2013). https://doi.org/10.1117/1.OE.53.3.031206
Published: 27 November 2013
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KEYWORDS
Terahertz radiation
Plasmons
Field effect transistors
Electrons
Plasma
Sensors
Millimeter wave sensors
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