High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

Yao O. Jin; David Saint-John; Nikolas Podraza; Thomas N. Jackson; Mark W. Horn

doi:10.1117/1.OE.54.3.037101

4 March 2015 High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

Yao O. Jin, David Saint-John, Nikolas Podraza, Thomas N. Jackson, Mark W. Horn

Author Affiliations +

Optical Engineering, Vol. 54, Issue 3, 037101 (March 2015). https://doi.org/10.1117/1.OE.54.3.037101

Abstract

Molybdenum oxide (MoO_x) and nickel oxide (NiO_x) thin films were deposited by reactive biased target ion beam deposition. MoO_x thin film resistivity varied from 3 to 2000 Ω·cm with a temperature coefficient of resistance (TCR) from −1.7% to −3.2%/K, and NiO_x thin film resistivity varied from 1 to 300 Ω·cm with a TCR from −2.2% to −3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoO_x and NiO_x thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoO_x or NiO_x thin films offer improved process control for resistive temperature sensors.

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Yao O. Jin, David Saint-John, Nikolas Podraza, Thomas N. Jackson, and Mark W. Horn "High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications," Optical Engineering 54(3), 037101 (4 March 2015). https://doi.org/10.1117/1.OE.54.3.037101

Published: 4 March 2015

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